FGA40N65SMD
onsemi
onsemi
IGBT FIELD STOP 650V 80A TO3PN
$4.85
Available to order
Reference Price (USD)
1+
$4.02000
10+
$3.62300
450+
$2.84407
900+
$2.56491
1,350+
$2.18290
Exquisite packaging
Discount
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Optimize your power systems with the FGA40N65SMD Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGA40N65SMD delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 349 W
- Switching Energy: 820µJ (on), 260µJ (off)
- Input Type: Standard
- Gate Charge: 119 nC
- Td (on/off) @ 25°C: 12ns/92ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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