HGTG7N60A4D
Harris Corporation
Harris Corporation
N-CHANNEL IGBT
$1.77
Available to order
Reference Price (USD)
450+
$2.08951
Exquisite packaging
Discount
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The HGTG7N60A4D by Harris Corporation is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the HGTG7N60A4D delivers robust performance. Harris Corporation's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate HGTG7N60A4D into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 34 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
- Power - Max: 125 W
- Switching Energy: 55µJ (on), 60µJ (off)
- Input Type: Standard
- Gate Charge: 37 nC
- Td (on/off) @ 25°C: 11ns/100ns
- Test Condition: 390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr): 34 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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