IKW75N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
$7.52
Available to order
Reference Price (USD)
1+
$7.71000
10+
$7.02000
240+
$5.90542
720+
$5.21278
1,200+
$4.61048
Exquisite packaging
Discount
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Enhance your electronic projects with the IKW75N65ES5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKW75N65ES5XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKW75N65ES5XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 2.4mJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 164 nC
- Td (on/off) @ 25°C: 40ns/144ns
- Test Condition: 400V, 75A, 18Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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