STGWA30IH65DF
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V, 30
$3.23
Available to order
Reference Price (USD)
1+
$3.23000
500+
$3.1977
1000+
$3.1654
1500+
$3.1331
2000+
$3.1008
2500+
$3.0685
Exquisite packaging
Discount
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Optimize your power systems with the STGWA30IH65DF Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the STGWA30IH65DF delivers consistent and reliable operation. Trust STMicroelectronics's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
- Power - Max: 180 W
- Switching Energy: 123µJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: -/200ns
- Test Condition: 400V, 30A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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