IXGA12N120A3-TRL
IXYS
IXYS
IXGA12N120A3 TRL
$3.58
Available to order
Reference Price (USD)
1+
$3.58325
500+
$3.5474175
1000+
$3.511585
1500+
$3.4757525
2000+
$3.43992
2500+
$3.4040875
Exquisite packaging
Discount
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Upgrade your power management systems with the IXGA12N120A3-TRL Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGA12N120A3-TRL provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGA12N120A3-TRL for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 22 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
- Power - Max: 100 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 20.4 nC
- Td (on/off) @ 25°C: 35ns/62ns
- Test Condition: 960V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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