IGP30N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 55A TO220-3
$1.86
Available to order
Reference Price (USD)
500+
$1.70832
Exquisite packaging
Discount
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Upgrade your power management systems with the IGP30N65H5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGP30N65H5XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGP30N65H5XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 280µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 19ns/177ns
- Test Condition: 400V, 15A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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