BLF7G10LS-250,112
NXP USA Inc.
NXP USA Inc.
N-CHANNEL, MOSFET
$103.21
Available to order
Reference Price (USD)
60+
$106.38133
Exquisite packaging
Discount
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Meet the BLF7G10LS-250,112, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The BLF7G10LS-250,112 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the BLF7G10LS-250,112 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 869MHz ~ 960MHz
- Gain: 19.5dB
- Voltage - Test: 30 V
- Current Rating (Amps): 5µA
- Noise Figure: -
- Current - Test: 1.8 A
- Power - Output: 250W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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