BLF7G24LS-160P,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 2-ELEMENT, S BAND, SILI
$120.55
Available to order
Reference Price (USD)
1+
$120.55000
500+
$119.3445
1000+
$118.139
1500+
$116.9335
2000+
$115.728
2500+
$114.5225
Exquisite packaging
Discount
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Engineered for excellence, the BLF7G24LS-160P,112 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The BLF7G24LS-160P,112's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s BLF7G24LS-160P,112 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.2 A
- Power - Output: 30W
- Voltage - Rated: 65 V
- Package / Case: SOT539B
- Supplier Device Package: SOT539B
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