BSB013NE2LXIXUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 36A/163A 2WDSON
$1.95
Available to order
Reference Price (USD)
5,000+
$0.85800
10,000+
$0.84000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSB013NE2LXIXUMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
Related Products
Infineon Technologies
AUIRF7736M2TR
Infineon Technologies
IPW60R024P7XKSA1
Toshiba Semiconductor and Storage
TK33S10N1Z,LXHQ
Texas Instruments
CSD19538Q3A
Vishay Siliconix
IRFU9120PBF
Nexperia USA Inc.
NX7002AKVL
onsemi
FQD7P06TM
Microchip Technology
APT40N60JCU3
onsemi
NTMFS4854NST3G
Fairchild Semiconductor