BSB165N15NZ3GXUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 9A/45A 2WDSON
$4.24
Available to order
Reference Price (USD)
5,000+
$1.70467
Exquisite packaging
Discount
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Enhance your electronic projects with the BSB165N15NZ3GXUMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSB165N15NZ3GXUMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
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