BSC014N04LSIATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 31A/100A TDSON
$3.51
Available to order
Reference Price (USD)
5,000+
$1.47339
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSC014N04LSIATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
Microchip Technology
DN2470K4-G
Vishay Siliconix
IRFR120TRPBF-BE3
Microchip Technology
VN0606L-G-P003
STMicroelectronics
STU11N65M2
Microchip Technology
APT1003RSLLG
Rohm Semiconductor
SCT4045DW7HRTL
IXYS
IXFR16N120P
onsemi
FQT7N10TF
onsemi
FCH47N60N
Micro Commercial Co