FCH47N60N
onsemi
onsemi
MOSFET N-CH 600V 47A TO247-3
$13.31
Available to order
Reference Price (USD)
1+
$11.16000
10+
$10.04500
450+
$7.58940
900+
$6.38402
1,350+
$6.02687
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FCH47N60N single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FCH47N60N for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 368W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Micro Commercial Co
MSJPF11N65-BP
STMicroelectronics
STW18N65M5
Infineon Technologies
IPA030N10N3GXKSA1
Fairchild Semiconductor
FDI8442
Taiwan Semiconductor Corporation
TSM150P04LCS RLG
Infineon Technologies
IPB200N15N3GATMA1
onsemi
FDS8880
NTE Electronics, Inc
NTE455
STMicroelectronics
STB14NM50N
onsemi