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NTE455

NTE Electronics, Inc
NTE455 Preview
NTE Electronics, Inc
MOSFET-DUAL GATE N-CH
$2.98
Available to order
Reference Price (USD)
1+
$2.98000
500+
$2.9502
1000+
$2.9204
1500+
$2.8906
2000+
$2.8608
2500+
$2.831
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 25mA
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
  • FET Feature: Standard
  • Power Dissipation (Max): 200mW (Ta)
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: SOT-103

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