R6515KNX3C16
Rohm Semiconductor
Rohm Semiconductor
650V 15A, TO-220AB, HIGH-SPEED S
$3.70
Available to order
Reference Price (USD)
1+
$3.70000
500+
$3.663
1000+
$3.626
1500+
$3.589
2000+
$3.552
2500+
$3.515
Exquisite packaging
Discount
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The R6515KNX3C16 from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the R6515KNX3C16 offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 161W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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