IPA030N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 79A TO220-FP
$7.79
Available to order
Reference Price (USD)
500+
$3.68232
Exquisite packaging
Discount
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The IPA030N10N3GXKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPA030N10N3GXKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 79A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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