BSC016N03LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 32A/100A TDSON
$1.97
Available to order
Reference Price (USD)
5,000+
$0.67664
Exquisite packaging
Discount
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The BSC016N03LSGATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSC016N03LSGATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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