BSG0813NDIATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 25V 19A/33A TISON8
$1.80
Available to order
Reference Price (USD)
5,000+
$1.01930
Exquisite packaging
Discount
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Optimize your electronic projects with the BSG0813NDIATMA1 from Infineon Technologies, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the BSG0813NDIATMA1 ensures top-notch performance. Infineon Technologies's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 19A, 33A
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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