SI5513CDC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V 4A 1206-8
$0.65
Available to order
Reference Price (USD)
3,000+
$0.24368
6,000+
$0.22883
15,000+
$0.21398
30,000+
$0.20358
Exquisite packaging
Discount
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Discover the high-performance SI5513CDC-T1-GE3 from Vishay Siliconix, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the SI5513CDC-T1-GE3 delivers unmatched performance. Trust Vishay Siliconix's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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