EPC2105
EPC
EPC
GAN TRANS ASYMMETRICAL HALF BRID
$9.16
Available to order
Reference Price (USD)
500+
$4.85150
1,000+
$4.38200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2105 by EPC is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the EPC2105 provides reliable operation under stringent conditions. EPC's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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