IPG20N10S4L35AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 100V 20A 8TDSON
$0.76
Available to order
Reference Price (USD)
5,000+
$0.51234
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance IPG20N10S4L35AATMA1 from Infineon Technologies, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the IPG20N10S4L35AATMA1 delivers unmatched performance. Trust Infineon Technologies's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
- Power - Max: 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
Related Products
Advanced Linear Devices Inc.
ALD114804PCL
Toshiba Semiconductor and Storage
SSM6P40TU,LF
Fairchild Semiconductor
FDW2511NZ
Rectron USA
RM8205F
Vishay Siliconix
SQJB44EP-T1_GE3
onsemi
NVMFD5C650NLWFT1G
Advanced Linear Devices Inc.
ALD111933SAL
Diodes Incorporated
DMN61D9UDW-7
STMicroelectronics
STL66DN3LLH5
Diodes Incorporated