ZXMC3AMCTA
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
$1.09
Available to order
Reference Price (USD)
3,000+
$0.49764
6,000+
$0.47562
15,000+
$0.45989
Exquisite packaging
Discount
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Discover the high-performance ZXMC3AMCTA from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the ZXMC3AMCTA delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: DFN3020B-8
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