BSH103,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 850MA TO236AB
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
Discount
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The BSH103,215 by Nexperia USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the BSH103,215 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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