IXTA08N100D2HV-TRL
IXYS
IXYS
MOSFET N-CH 1000V 800MA TO263HV
$2.29
Available to order
Reference Price (USD)
1+
$2.28689
500+
$2.2640211
1000+
$2.2411522
1500+
$2.2182833
2000+
$2.1954144
2500+
$2.1725455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXTA08N100D2HV-TRL by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXTA08N100D2HV-TRL is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263HV
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NVMFS5C670NLWFAFT1G
STMicroelectronics
STL4N80K5
IXYS
IXTQ470P2
Nexperia USA Inc.
PMV15ENER
Infineon Technologies
AUIRF1404
Alpha & Omega Semiconductor Inc.
AO3401A
Infineon Technologies
IPS60R800CEAKMA1
Fairchild Semiconductor
FQPF6N60
Nexperia USA Inc.
PSMN0R9-25YLC,115
PN Junction Semiconductor