P3M06060K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 48A TO247-3
$10.38
Available to order
Reference Price (USD)
1+
$10.38000
500+
$10.2762
1000+
$10.1724
1500+
$10.0686
2000+
$9.9648
2500+
$9.861
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the P3M06060K3 by PN Junction Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the P3M06060K3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 48A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 20mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 188W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIUD412ED-T1-GE3
STMicroelectronics
STW56N65DM2
Panjit International Inc.
PJQ4402P-AU_R2_000A1
Infineon Technologies
IPB107N20NAATMA1
Infineon Technologies
AUIRF7648M2TR
Rohm Semiconductor
RD3S075CNTL1
Nexperia USA Inc.
BSH201,215
Toshiba Semiconductor and Storage
TK28V65W5,LQ
Diodes Incorporated
DMN65D8LV-13
Panjit International Inc.