BSH202,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 520MA TO236AB
$0.40
Available to order
Reference Price (USD)
3,000+
$0.12390
6,000+
$0.11730
15,000+
$0.11070
30,000+
$0.10278
75,000+
$0.09948
Exquisite packaging
Discount
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Meet the BSH202,215 by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSH202,215 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 417mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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