BSM080D12P2C008
Rohm Semiconductor
Rohm Semiconductor
SIC POWER MODULE-1200V-80A
$382.48
Available to order
Reference Price (USD)
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$301.74000
12+
$297.48583
Exquisite packaging
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The BSM080D12P2C008 by Rohm Semiconductor is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the BSM080D12P2C008 ensures consistent and dependable performance. Rohm Semiconductor's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 13.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
- Power - Max: 600W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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