BSM10GD120DN2E3224BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2A-211
$91.20
Available to order
Reference Price (USD)
1+
$91.20000
500+
$90.288
1000+
$89.376
1500+
$88.464
2000+
$87.552
2500+
$86.64
Exquisite packaging
Discount
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Infineon Technologies's BSM10GD120DN2E3224BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the BSM10GD120DN2E3224BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 15 A
- Power - Max: 80 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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