BSM150GB170DLCE3256HDLA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 300A 1250W
$103.40
Available to order
Reference Price (USD)
1+
$103.40000
500+
$102.366
1000+
$101.332
1500+
$100.298
2000+
$99.264
2500+
$98.23
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's BSM150GB170DLCE3256HDLA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The BSM150GB170DLCE3256HDLA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's BSM150GB170DLCE3256HDLA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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