NXH240B120H3Q1PG
onsemi
onsemi
PIM Q1 3 CHANNEL IGBT+SIC BOOST
$95.73
Available to order
Reference Price (USD)
1+
$95.72524
500+
$94.7679876
1000+
$93.8107352
1500+
$92.8534828
2000+
$91.8962304
2500+
$90.938978
Exquisite packaging
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Optimize your power systems with onsemi's NXH240B120H3Q1PG, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The NXH240B120H3Q1PG is particularly effective in high-ambient-temperature environments like steel mill drives. onsemi brings decades of semiconductor expertise to every NXH240B120H3Q1PG module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Triple, Dual - Common Source
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 68 A
- Power - Max: 158 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 32-PIM (71x37.4)
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