IXBN42N170A
IXYS
IXYS
IGBT MOD 1700V 42A 312W SOT227B
$38.40
Available to order
Reference Price (USD)
10+
$30.15500
Exquisite packaging
Discount
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IXYS's IXBN42N170A stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the IXBN42N170A enables higher power density in MRI gradient amplifiers. Choose IXYS for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 42 A
- Power - Max: 312 W
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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