IXXN200N60B3H1
IXYS
IXYS
IGBT MOD 600V 200A 780W SOT227B
$35.58
Available to order
Reference Price (USD)
10+
$29.33200
Exquisite packaging
Discount
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Discover the power of IXYS's IXXN200N60B3H1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The IXXN200N60B3H1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With IXYS's IXXN200N60B3H1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 780 W
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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