NXH200T120H3Q2F2STNG
onsemi
onsemi
80KW GEN-II Q2PACK-200A MODULE W
$122.76
Available to order
Reference Price (USD)
1+
$122.75500
500+
$121.52745
1000+
$120.2999
1500+
$119.07235
2000+
$117.8448
2500+
$116.61725
Exquisite packaging
Discount
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Discover the power of onsemi's NXH200T120H3Q2F2STNG, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The NXH200T120H3Q2F2STNG performs exceptionally well in high-voltage DC transmission and pulsed power applications. With onsemi's NXH200T120H3Q2F2STNG, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 330 A
- Power - Max: 679 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 56-PIM/Q2PACK (93x47)
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