FS75R07N2E4BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-411
$113.12
Available to order
Reference Price (USD)
1+
$113.12000
500+
$111.9888
1000+
$110.8576
1500+
$109.7264
2000+
$108.5952
2500+
$107.464
Exquisite packaging
Discount
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Infineon Technologies's FS75R07N2E4BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FS75R07N2E4BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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