BSM25GD120DN2BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 35A 200W
$83.05
Available to order
Reference Price (USD)
10+
$87.21200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the BSM25GD120DN2BOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The BSM25GD120DN2BOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the BSM25GD120DN2BOSA1.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 200 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP15R12KE3BOMA1
Infineon Technologies
BSM200GB120DLCE3256HOSA1
Microchip Technology
APTGT50DU120TG
Infineon Technologies
BSM100GD120DLCBOSA1
Infineon Technologies
FF450R33T3E3P3BPMA1
Infineon Technologies
BSM35GP120GBOSA1
Microchip Technology
APTGT400SK120G
Infineon Technologies
BSM300GA170DLCHOSA1
Infineon Technologies
FS100R07N3E4BOSA1
Microchip Technology