FF600R06ME3BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 600V 700A 1650W
$172.06
Available to order
Reference Price (USD)
10+
$148.16900
Exquisite packaging
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Experience next-generation power control with Infineon Technologies's FF600R06ME3BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FF600R06ME3BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FF600R06ME3BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FF600R06ME3BOSA1 IGBT module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 700 A
- Power - Max: 1650 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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