IFS150B12N3E4PB11BPSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 300A 750W
$317.64
Available to order
Reference Price (USD)
6+
$200.11833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with Infineon Technologies's IFS150B12N3E4PB11BPSA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The IFS150B12N3E4PB11BPSA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every IFS150B12N3E4PB11BPSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 750 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
DF200R07W2H3B77BPSA1
IXYS
MIXA81WB1200TEH
Microchip Technology
APTGLQ200H65G
Infineon Technologies
BSM25GD120DN2BOSA1
Infineon Technologies
FP15R12KE3BOMA1
Infineon Technologies
BSM200GB120DLCE3256HOSA1
Microchip Technology
APTGT50DU120TG
Infineon Technologies
BSM100GD120DLCBOSA1
Infineon Technologies
FF450R33T3E3P3BPMA1
Infineon Technologies