MUBW50-12A8
IXYS
IXYS
IGBT MODULE 1200V 85A 350W E3
$148.23
Available to order
Reference Price (USD)
1+
$109.06000
10+
$102.24000
25+
$97.46880
100+
$92.01600
Exquisite packaging
Discount
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IXYS's MUBW50-12A8 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the MUBW50-12A8 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust IXYS to deliver cutting-edge IGBT solutions with the MUBW50-12A8 power module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 85 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
- Current - Collector Cutoff (Max): 3.7 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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