BSM150GB170DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 220A 1250W
$133.33
Available to order
Reference Price (USD)
1+
$133.33000
500+
$131.9967
1000+
$130.6634
1500+
$129.3301
2000+
$127.9968
2500+
$126.6635
Exquisite packaging
Discount
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Engineered for excellence, the BSM150GB170DN2HOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The BSM150GB170DN2HOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the BSM150GB170DN2HOSA1.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 220 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
- Current - Collector Cutoff (Max): 1.5 mA
- Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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