VS-GT50YF120NT
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
ECONO - 4 PACK IGBT
$115.89
Available to order
Reference Price (USD)
1+
$115.89000
500+
$114.7311
1000+
$113.5722
1500+
$112.4133
2000+
$111.2544
2500+
$110.0955
Exquisite packaging
Discount
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The VS-GT50YF120NT from Vishay General Semiconductor - Diodes Division exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the VS-GT50YF120NT in megawatt-level wind turbine converters. With Vishay General Semiconductor - Diodes Division's proven track record, the VS-GT50YF120NT represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 64 A
- Power - Max: 231 W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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