BSM180D12P2C101
Rohm Semiconductor
Rohm Semiconductor
MOSFET 2N-CH 1200V 180A MODULE
$527.24
Available to order
Reference Price (USD)
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$410.07000
Exquisite packaging
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Elevate your electronics with the BSM180D12P2C101 from Rohm Semiconductor, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the BSM180D12P2C101 provides the reliability and efficiency you need. Rohm Semiconductor's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 35.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
- Power - Max: 1130W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
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