BSM180D12P3C007
Rohm Semiconductor
Rohm Semiconductor
SIC POWER MODULE
$675.92
Available to order
Reference Price (USD)
1+
$525.71000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSM180D12P3C007 by Rohm Semiconductor is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the BSM180D12P3C007 offers superior functionality and longevity. Trust Rohm Semiconductor to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Power - Max: 880W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
onsemi
FDS8958B
Sanken
SLA5074
Alpha & Omega Semiconductor Inc.
AON3611
onsemi
FDMS9620S
onsemi
NTLUD3A50PZTBG
onsemi
FDC3601N
Diodes Incorporated
DMN2022UNS-7
Infineon Technologies
IPD65R600E6
Nexperia USA Inc.
NX6008NBKSX
Panjit International Inc.