BSP315PH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 1.17A SOT223-4
$1.10
Available to order
Reference Price (USD)
1,000+
$0.36563
2,000+
$0.33469
5,000+
$0.31406
10,000+
$0.30375
25,000+
$0.29813
Exquisite packaging
Discount
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The BSP315PH6327XTSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSP315PH6327XTSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
- Vgs(th) (Max) @ Id: 2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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