BSP60,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP DARL 45V 1A SOT223
$0.67
Available to order
Reference Price (USD)
1,000+
$0.28334
2,000+
$0.26154
5,000+
$0.24701
10,000+
$0.23975
Exquisite packaging
Discount
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The BSP60,115 Bipolar Junction Transistor (BJT) by Nexperia USA Inc. is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BSP60,115 provides consistent performance in demanding applications. Choose Nexperia USA Inc. for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.25 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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