BSS123LT1G
onsemi
onsemi
MOSFET N-CH 100V 170MA SOT23-3
$0.33
Available to order
Reference Price (USD)
3,000+
$0.05266
6,000+
$0.04603
15,000+
$0.03940
30,000+
$0.03719
75,000+
$0.03497
150,000+
$0.03055
Exquisite packaging
Discount
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The BSS123LT1G by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the BSS123LT1G is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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