BSS127H6327XTSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 21MA SOT23-3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.11393
6,000+
$0.10815
15,000+
$0.09949
30,000+
$0.09371
75,000+
$0.08505
Exquisite packaging
Discount
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Enhance your electronic projects with the BSS127H6327XTSA2 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSS127H6327XTSA2 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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