BSS64LT1G
onsemi
onsemi
TRANS NPN 80V 0.1A SOT23-3
$0.26
Available to order
Reference Price (USD)
3,000+
$0.03985
6,000+
$0.03607
15,000+
$0.03154
30,000+
$0.02851
75,000+
$0.02549
150,000+
$0.02146
Exquisite packaging
Discount
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Enhance your circuit designs with the BSS64LT1G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BSS64LT1G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
- Power - Max: 225 mW
- Frequency - Transition: 60MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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