BST61,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP DARL 60V 1A SOT89
$0.71
Available to order
Reference Price (USD)
1,000+
$0.30155
2,000+
$0.27710
5,000+
$0.26895
Exquisite packaging
Discount
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Discover the BST61,115 Bipolar Junction Transistor (BJT) from Nexperia USA Inc., a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the BST61,115 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Nexperia USA Inc. for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.3 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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