BSZ070N08LS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 40A TSDSON
$1.88
Available to order
Reference Price (USD)
5,000+
$0.63845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSZ070N08LS5ATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
- FET Feature: Standard
- Power Dissipation (Max): 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NVMYS1D2N04CLTWG
onsemi
NTBV45N06T4G
Rectron USA
RM7N600LD
Infineon Technologies
IRF7853TRPBF
Vishay Siliconix
IRFI614GPBF
Diodes Incorporated
DMG3404L-7
Nexperia USA Inc.
PSMN4R6-60BS,118
Toshiba Semiconductor and Storage
TPH4R50ANH,L1Q
onsemi
FQP34N20
Infineon Technologies