BSZ084N08NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 40A TSDSON
$1.85
Available to order
Reference Price (USD)
5,000+
$0.56238
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSZ084N08NS5ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSZ084N08NS5ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 31µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
IRFU9310PBF
Nexperia USA Inc.
BUK9240-100A,118
onsemi
NVMFSC0D9N04CL
Infineon Technologies
IRFH8324TR2PBF
Infineon Technologies
IPA65R225C7
onsemi
NTP30N06LG
IXYS
IXTK46N50L
STMicroelectronics
STP18N65M2
Microchip Technology
APT50M50JVFR
Renesas Electronics America Inc