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BSZ110N08NS5ATMA1

Infineon Technologies
BSZ110N08NS5ATMA1 Preview
Infineon Technologies
MOSFET N-CH 80V 40A TSDSON
$1.32
Available to order
Reference Price (USD)
5,000+
$0.40233
10,000+
$0.38720
25,000+
$0.38500
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN

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